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Proceedings Paper

Fabrication of periodical structures with the help of chalcogenide inorganic resists
Author(s): Peter E. Shepeljavi; Sergey A. Kostyukevych; Ivan Z. Indutnyi; Alexander V. Stronski
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Paper Abstract

We report on the use of media on the base of chalcogenide vitreous semiconductors (ChVS) to fabricate periodical structures for integrated and diffractive optics. Most of attention is devoted to the original properties of such media, which are based on two effects: photodoping and photostimulated solubility changes of ChVS layers. The composition of ChVS was mostly from As-S-Se line. The lightsensitivity properties (including characteristic curves) of ChVS layers and ChVS - Ag systems are presented. The results of the direct recording of periodical structures with the help of sharply focused laser irradiation on ChVs - Ag systems and ChVS layers are discussed. It is shown that with the help of laser lithography on the ChVS-Ag systems it is possible to produce narrow lines, the width of which is substantially narrower that the exposure beam halfwidth (similar to the reported earlier by us effect on ChVS layers). The both cases are explained by the peculiarities of the characteristic curves of the given inorganic resists and lightsensitivity dependence from the temperature. The 'selffocusing' effects in such media enables to produce lines of up to 0.17 micrometers width on recording wavelength (lambda) equals 476 nm. Increased resolution capability enables to produce the asymmetrical profiles by using the direct recording with the help of sawtooth-like exposure distribution. The possibility of image transfer into relief forming layer or substrate with the help of wet or dry etching is shown.

Paper Details

Date Published: 21 October 1994
PDF: 5 pages
Proc. SPIE 2291, Integrated Optics and Microstructures II, (21 October 1994); doi: 10.1117/12.190907
Show Author Affiliations
Peter E. Shepeljavi, Institute of Semiconductor Physics (Ukraine)
Sergey A. Kostyukevych, Institute of Semiconductor Physics (Ukraine)
Ivan Z. Indutnyi, Institute of Semiconductor Physics (Ukraine)
Alexander V. Stronski, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2291:
Integrated Optics and Microstructures II
Massood Tabib-Azar; Dennis L. Polla; Ka-Kha Wong, Editor(s)

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