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Proceedings Paper

Visible photoluminescent Ge nanocrystals embedded in a-SiNx films
Author(s): Xuexuan Qu; Xinfan Huang; Kun-Ji Chen; Zhifeng Li; Duan Feng
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Paper Abstract

Ge nanocrystals embedded in a-SiNx matrix were prepared by the PECVD method with SiH4, GeH4 and NH3 mixed in H2 plasma and followed the thermal-annealing treatment, which was based on the preferential chemical bonding formation of Si-N and Ge-Ge. The samples were characterized by infrared absorption, X-ray diffraction, Raman scattering spectra and TEM micrograph. Visible photoluminescence was observed at room temperature with the PL peak at about 560 nm and the linewidth about 0.45 eV. We are temporarily using the quantum confinement model to explain the PL mechanism.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190814
Show Author Affiliations
Xuexuan Qu, Nanjing Univ. (China)
Xinfan Huang, Nanjing Univ. (China)
Kun-Ji Chen, Nanjing Univ. (China)
Zhifeng Li, Nanjing Univ. (China)
Duan Feng, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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