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Proceedings Paper

Kinetics of oxide formation on FeCrAl thin films
Author(s): Yonggang Wu
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Paper Abstract

The thermal oxidation kinetics of FeCrAl alloy thin films in ambient air been investigated in the temperature range 400 approximately equals 530 degree(s)C. The films were deposited on to oxidized single crystal silicon wafers and glass substrates with thermal evaporation. In the studied region the growth of oxides has been found to obey a parabolic growth-rate law, the oxidation mechanism has been analyzed with Wagner model. The rate constant k, is temperature dependent and satisfies the Arrhenius relationship. The activation enthalpy Hp is evaluated. Auger electron spectrometry and X-ray diffraction have been used to investigate depth distribution and valence state of metals and oxygen during oxide growth.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190810
Show Author Affiliations
Yonggang Wu, Tongji Univ. (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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