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Proceedings Paper

Novel method of nucleation enhancement for diamond film on silicon deposited by HFCVD
Author(s): Xuanxiong Zhang; Xikang Zhang; Shenzhong Yang; Youfang Yao; Tian-Shen Shi
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Paper Abstract

HF acid eroded Si wafers were used as substrates for deposition diamond film by HFCVD. The nucleation process and film characteristics were studied. Enhanced nucleation density to the level for abraded Se substrate and pronounced (111) texture of the obtained continuous diamond film were observed.

Paper Details

Date Published: 26 October 1994
PDF: 4 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190808
Show Author Affiliations
Xuanxiong Zhang, Shanghai Institute of Metallurgy (China)
Xikang Zhang, Shanghai Institute of Metallurgy (China)
Shenzhong Yang, Shanghai Institute of Metallurgy (China)
Youfang Yao, Shanghai Institute of Metallurgy (China)
Tian-Shen Shi, Shanghai Institute of Metallurgy (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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