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Proceedings Paper

Vertical high-speed rotating disk reactors for production scale MOVPE of compound semiconductors
Author(s): Robert C. Walker; Alan G. Thompson; Gary S. Tompa; Peter A. Zawadzki; Alexander Gurary
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Paper Abstract

Compound semiconductors are at the heart of todays advanced digital and optoelectronic devices. As device production levels increase, so too does the need for high throughput deposition systems. The vertical rotating disk reactor (RDR) has been scaled to dimensions allowing metal organic chemical vapor deposition (MOCVD) on multiple substrates located on a 300 mm diameter platter. This symmetric large area reactor affords easy access over a wide range of angles for optical monitoring and control of the growth process. The RDR can be numerically modeled in a straightforward manner, and we have derived scaling rules allowing the prediction of optimum process conditions for larger reactor sizes. The material results give excellent agreement with the modeling, demonstrating GaAs/AlAs structures with < +/- 0.9% thickness uniformities on up to 17-50 mm or 4-100 mm GaAs substrates. Process issues related to reactor scaling are reviewed. With high reactant efficiencies and short cycle times between growths, through the use of a vacuum loadlock, the costs per wafer are found to be dramatically less than in alternative process reactors. The high reactant utilization, in combination with a dedicated and highly efficient exhaust scrubbing system, minimizes the systems environmental impact.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190807
Show Author Affiliations
Robert C. Walker, EMCORE Corp. (United States)
Alan G. Thompson, EMCORE Corp. (United States)
Gary S. Tompa, EMCORE Corp. (United States)
Peter A. Zawadzki, EMCORE Corp. (United States)
Alexander Gurary, EMCORE Corp. (United States)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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