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Proceedings Paper

Photo-enhanced MOCVD of Pb(Zr,Ti)O3 thin films using O3
Author(s): Masaru Shimizu; Masataka Sugiyama; Hironori Fujisawa; Tadashi Shiosaki
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Paper Abstract

Effects of O3 on the growth and electrical properties of Pb(Zr,Ti)O3 (PZT) thin films grown by photoenhanced metalorganic chemical vapor deposition (MOCVD) were investigated. Ferroelectric PZT films were obtained by both MOCVD and photoenhanced MOCVD using (3 at substrate temperatures higher than 560 degree(s)C. The crystalline orientation, growth rate and growth temperature were scarcely influenced by the use of O3 and photoirradiation. However, in the leakage current characteristics, an improvement in breakdown voltage by the use of O3 and photoirradiation was observed. From SEM observations, it was found that this improvement may be caused by the microscopic change in film structure.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190806
Show Author Affiliations
Masaru Shimizu, Kyoto Univ. (Japan)
Masataka Sugiyama, Kyoto Univ. (Japan)
Hironori Fujisawa, Kyoto Univ. (Japan)
Tadashi Shiosaki, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications

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