Share Email Print
cover

Proceedings Paper

Plasma-enhanced chemical vapor deposition of nitrogen-rich silicon oxynitride thin film for gate insulator application
Author(s): Wen-Jie Qi; Wei-Feng Yu; Bing-Zong Li; Jing Liu; Fang Lu; Ming Zhang; Guo-Sheng Dong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The nitrogen-rich silicon oxynitride thin film for gate insulator application has been studied in this work. The Plasma Enhanced Chemical Vapour Deposition (PECVD) process was carried out at 350 degree(s)C with a low power density (0.011 W/cm2). The Auger Electron Spectroscopy (AES) depth profiling and infrared absorption spectra show the film is composed of nitrogen-rich silicon oxynitride. MOS C-V measurements demonstrated that a pre-deposition plasma nitridation may result in a higher dielectric breakdown. The post- deposition densification can be used to remove the plasma induced damages, and the post-metallization annealing is effective in reducing the irradiation damage and obtaining a low interface state density.

Paper Details

Date Published: 26 October 1994
PDF: 4 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190804
Show Author Affiliations
Wen-Jie Qi, Fudan Univ. (China)
Wei-Feng Yu, Fudan Univ. (China)
Bing-Zong Li, Fudan Univ. (China)
Jing Liu, Fudan Univ. (China)
Fang Lu, Fudan Univ. (China)
Ming Zhang, Fudan Univ. (China)
Guo-Sheng Dong, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

© SPIE. Terms of Use
Back to Top