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Proceedings Paper

Magnetoresistance oscillation of Si delta-doping GaAs multiple quantum well
Author(s): Guozhen Zheng; Yayi Wei; Shaoling Guo; Dingyuan Tang; Zhenfu Peng; Yunqiang Zhang
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Paper Abstract

By using the MBE technique, we fabricated a GaAs film which contains three Si (delta) -doping layers, which form a three QW structure. Transverse magnetoresistance, longitudinal magneto-resistance and Hall resistance have been measured at low temperature from 0.3 K to 4.2 K and high magnetic field up to 7 T. SdH oscillation of the transverse magnetoresistance and diamagnetic SdH oscillation of the longitudinal magnetoresistance have been observed. Based on the experimental results, mechanism of the longitudinal oscillation and the Hall oscillation have been discussed.

Paper Details

Date Published: 26 October 1994
PDF: 4 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190803
Show Author Affiliations
Guozhen Zheng, National Lab. for Infrared Physics (China)
Yayi Wei, National Lab. for Infrared Physics (China)
Shaoling Guo, National Lab. for Infrared Physics (China)
Dingyuan Tang, Shanghai Institute of Technical Physics (China)
Zhenfu Peng, Nanjing Institute of Electronic Devices (China)
Yunqiang Zhang, Nanjing Institute of Electronic Devices (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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