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Proceedings Paper

PZT/a-Si:H composite thin film and photoelectric transfer
Author(s): Dao-Huai Wu; Zhang Zhou; Hui-Ting Chen; Da Wei Yu; Yongling Wang
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Paper Abstract

A new PZT/a-Si:H composite thin film is introduced in this paper. Its whole structure is pt/PZT/CR/a-Si:H/ITO. PZT thin film was prepared by RF sputtering method in the thickness of 0.5-1.0 micrometers , while a- Si:H thin film was prepared by RF glow discharge method with its thickness controlled to match the PZT thin film in resistance. The resistivity of a-Si:H thin film will drop about four order under optical exposure. Hence, when the composite thin film is exposed to light, the voltage applied to it will be transferred from a-Si:H to PZT. This composite thin film has many advantages such as fast response, high density, cheap price and easy match with Si integrated circuit. A lot of new devices can be designed with this thin film: Photoelectric switch, photomemory, optical sensor, etc.

Paper Details

Date Published: 26 October 1994
PDF: 3 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190797
Show Author Affiliations
Dao-Huai Wu, Shanghai Institute of Ceramics (China)
Zhang Zhou, Shanghai Institute of Ceramics (China)
Hui-Ting Chen, Shanghai Institute of Ceramics (China)
Da Wei Yu, Shanghai Institute of Ceramics (China)
Yongling Wang, Shanghai Institute of Ceramics (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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