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Proceedings Paper

Photoluminescence from strained SiGe/Si quantum well structures grown by Si molecular beam epitaxy
Author(s): Yong Yang; Xue Kun Lu; Da-Ming Huang; X. J. Chen; Zuimin Jiang; M. Yang; Y. L. Fan; D. W. Gong; G. Zhao; Xun Wang
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Paper Abstract

We reported deep-level-free band edge luminescence from strained SiGe/Si multiple quantum well structures grown by conventional solid source Si MBE. No-phonon (NP) transitions due to symmetry-breaking alloy disordering in SiGe layers and transverse optical (TO) phonon replicas were clearly identified. A high quality of crystallinity is essential to the efficient luminescence. The choice of a higher growth temperature, Ts equals 870 degree(s)C, beyond the conventional growth temperature window 400-600 degree(s)C, was found to be important for radioactive recombination in SiGe/Si QWs structures.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190791
Show Author Affiliations
Yong Yang, Fudan Univ. (China)
Xue Kun Lu, Fudan Univ. (China)
Da-Ming Huang, Fudan Univ. (China)
X. J. Chen, Fudan Univ. (China)
Zuimin Jiang, Fudan Univ. (China)
M. Yang, Fudan Univ. (China)
Y. L. Fan, Fudan Univ. (China)
D. W. Gong, Fudan Univ. (China)
G. Zhao, Fudan Univ. (China)
Xun Wang, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications

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