Share Email Print
cover

Proceedings Paper

Photoluminescence characterization of InGaAs/InP quantum dots
Author(s): S. Q. Gu; E. E. Reuter; Q. Xu; R. Panepucci; Arnold C. Chen; Hung-Pin Chang; Ilesanmi Adesida; Keh-Yung Y. Cheng; Stephen G. Bishop; Catherine Caneau; Rajaram J. Bhat
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The photo-excited carrier distribution and radiative recombination efficiency in dryetched quantum well dots (QWDs) with diameters down to 80 nm have been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. The quantum well dots were fabricated from lattice-matched single or multiple quantum well heterostructures with InGaAs well thicknesses ranging from 2 to 15 nm. Low temperature CL imaging indicated dot-to-dot variation of emission intensity. The PL efficiency exhibits no significant reduction for dot sizes larger than 170 nm. But for dot diameters smaller than approximately equals 100 nm, the PL intensity is not detectable. Such diminution of PL intensity is attributed to side wall damage due to reactive ion etching. For dot diameters smaller than 300 nm, PL peak energies shift to higher values, reaching a blue shift of approximately equals 3 meV for 128 nm diameter GSMBE grown dots and approximately equals 10 meV for 130 nm diameter MOCVD grown dots.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190790
Show Author Affiliations
S. Q. Gu, Univ. of Illinois/Urbana-Champaign (United States)
E. E. Reuter, Univ. of Illinois/Urbana-Champaign (United States)
Q. Xu, Univ. of Illinois/Urbana-Champaign (United States)
R. Panepucci, Univ. of Illinois/Urbana-Champaign (United States)
Arnold C. Chen, Univ. of Illinois/Urbana-Champaign (United States)
Hung-Pin Chang, Univ. of Illinois/Urbana-Champaign (United States)
Ilesanmi Adesida, Univ. of Illinois/Urbana-Champaign (United States)
Keh-Yung Y. Cheng, Univ. of Illinois/Urbana-Champaign (United States)
Stephen G. Bishop, Univ. of Illinois/Urbana-Champaign (United States)
Catherine Caneau, Bell Communications Research (United States)
Rajaram J. Bhat, Bell Communications Research (United States)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications

© SPIE. Terms of Use
Back to Top