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Proceedings Paper

Intersubband transition spectroscopy of GaAs/AlGaAs quantum well superlattice
Author(s): Meimei Z. Tidrow; Kwong-Kit Choi; Clency Lee-Yow; Wayne H. Chang
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Paper Abstract

The physics and application of the intersubband transitions in GaAs/AlGaAs quantum well superlattice structures have been under intense investigation in recent years. In this report, theoretical design and experiment of three GaAs/AlGaAs quantum well superlattice samples are given in detail. The samples are grown by MBE technique on semi-insulating GaAs substrate. The three samples have different growth parameters and therefore different energy band structures. The transitions have bound to bound and bound to continuum states. Fourier Transform Infrared (FTIR) spectra and the infrared photoelectron tunneling (IPET) spectra are measured and the results agree well with each other and with the calculations.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190788
Show Author Affiliations
Meimei Z. Tidrow, U.S. Army Research Lab. (United States)
Kwong-Kit Choi, U.S. Army Research Lab. (United States)
Clency Lee-Yow, U.S. Army Research Lab. (United States)
Wayne H. Chang, Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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