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Proceedings Paper

Interfaces in crystalline materials
Author(s): F. Flores; R. Saiz-Pardo; R. Rincon
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Paper Abstract

A brief review of the theoretical state of the art in the field of semiconductor interfaces is presented. It is shown that the important factor controlling the different semiconductor barrier heights is the density of states associated with the semiconductor dangling-bonds. passivated semiconductor surfaces present saturated dangling-bonds and have modified barrier heights. Results for hydrogen-passivated GaAs (110)-surfaces are presented; it is shown that the Schottky-barrier height formed by the deposition of a K-layer is sustantially changed by the hydrogen-passivation.

Paper Details

Date Published: 26 October 1994
PDF: 8 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190787
Show Author Affiliations
F. Flores, Univ. Autonoma de Madrid (Spain)
R. Saiz-Pardo, Univ. Autonoma de Madrid (Spain)
R. Rincon, Univ. Autonoma de Madrid (Spain)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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