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Proceedings Paper

Clustering and strain influence on the optical and vibrational properties of In0.53Ga0.47As/InP epitaxial heterostructures
Author(s): Alexander I. Belogorokhov; E. V. Solov'eva; M. G. Mil'vidskii; A. N. Osipova
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Paper Abstract

InGaAs epitaxial layers (EL) have a number of physical properties which are very attracted for many practical applications. Special place in this system takes isoperiodical heterocomposition Inx Ga1-xAs/InP, in order to receive EL's with minimum of mismatch on heterojunction. However lattice parameters of binary compounds InAs and GaAs which formed this solid solution differ by 7 percent. This is a reason of existence in Inx Ga1-xAs considerable 'internal' strains, which are comparable with mixing enthalpy. Therefore phase transitions (ordering or clustering) take place in the solid solution. Such transitions decrease the system energy and may be occur during EL's growth. In this situation may be expected the fundamental properties dependence from thermal growth condition. In addition to the strains source inside EL's 'external' strains may be presented. They may be conditioned by EL's and substrate lattice mismatch, for example. Therefore it was interesting to retrace how physical properties of material change depending on layers lattice mismatch to substrate.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190786
Show Author Affiliations
Alexander I. Belogorokhov, Institute of Rare Metals (Russia)
E. V. Solov'eva, Institute of Rare Metals (Russia)
M. G. Mil'vidskii, Institute of Rare Metals (Russia)
A. N. Osipova, Institute of Rare Metals (Russia)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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