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Proceedings Paper

Growth and some properties of AlxIn1-xN crystalline thin films
Author(s): Qixin Guo; Hiroshi Ogawa; Akira Yoshida
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Paper Abstract

AlxIn1-xN thin films have been fabricated on (0001) oriented (alpha) --Al2O3 sapphire substrates by microwave- excited metalorganic vapor phase epitaxy. The properties of the films have been studied by the reflection high-energy electron diffraction technique, x-ray diffraction, and optical measurements. At growth temperature of 600 degree(s)C, single crystalline layers of AlxIn1-xN were obtained for the first time. The fundamental absorption edge of the AlxIn1-xN film varies continuously with composition.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190782
Show Author Affiliations
Qixin Guo, Saga Univ. (Japan)
Hiroshi Ogawa, Saga Univ. (Japan)
Akira Yoshida, Toyohashi Univ. of Technology (Japan)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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