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Proceedings Paper

Growth and surface structure of epitaxial Be thin films
Author(s): Charles M. Falco; James Eickmann; Judith A. Ruffner; Jon M. Slaughter
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Paper Abstract

We have investigated the growth of beryllium thin films on (alpha) - Al2O3, Si (111), and Ge (111). In all cases, epitaxial Be films were obtained under the proper conditions. The effects of substrate temperature T on crystalline quality and surface structure were also studied. Samples were analyzed in situ using reflection high energy electron diffraction and ex situ with ion beam analysis, scanning electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. Studies showed an increase in crystalline quality with increased T, as well as the presence of a surface superstructure, probably (root)3 X (root)3, R30 degree(s), for films deposited on Si at T >= 300 degree(s)C and films on Ge at T >= 200 degree(s)C. To date, the highest quality Be films are those grown on Ge (111) at T equals 300 degree(s)C.

Paper Details

Date Published: 26 October 1994
PDF: 7 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190777
Show Author Affiliations
Charles M. Falco, Optical Sciences Ctr./Univ. of Arizona (United States)
James Eickmann, Optical Sciences Ctr./Univ. of Arizona (United States)
Judith A. Ruffner, Optical Sciences Ctr./Univ. of Arizona (United States)
Jon M. Slaughter, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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