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Proceedings Paper

Study of GaSb Schottky contacts
Author(s): Yan-Kuin Su; H. Kuan; P. H. Chang; ShuWoei Chiou
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Paper Abstract

Various metals were evaporated on the n-GaSb epilayer grown by low pressure metal organic chemical vapor deposition (MOCVD) to form the Schottky contact. The barrier height is almost independent of the work function and is determined entirely by the doping and surface property of the semiconductor. These results are in good agreement with Bardeen model. The carrier transport of Pd/n-GaSb contacts was studied and analyzed to discuss the effect of doping level of GaSb epilayer on the barrier height of the contact.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190775
Show Author Affiliations
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
H. Kuan, National Cheng Kung Univ. (Taiwan)
P. H. Chang, National Cheng Kung Univ. (Taiwan)
ShuWoei Chiou, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications

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