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Proceedings Paper

Strain effects and band offset control of GaxIn1-xAs/AlyIn1-yAs quantum wells
Author(s): Ming Qi; Aizhen Li
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Paper Abstract

The strain effects on GaInAs/AlInAs quantum wells grown on InP substrates were studied theoretically. Three structures, i.e., GaxIn1-xAs/Al0.48Ga0.52As, Ga0.47In0.53As/AlyIn1-yAs and GaxIn1-xAs/AlyIn1-yAs were analyzed. It was shown that the band alignments for the strained structures change obviously compared with the unstrained case. The type-I and type-II band lineups can be formed respectively for the heavy-hole and light-hole valence subbands. The strain effect on the band discontinuities give a possibility to control the band offset for GaxIn1-xAs/AlyIn1-yAs quantum well structures by using the strained layers.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190771
Show Author Affiliations
Ming Qi, Shanghai Institute of Metallurgy (China)
Aizhen Li, Shanghai Institute of Metallurgy (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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