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Proceedings Paper

Valence-band offsets at strained semiconductor heterojunctions
Author(s): Jianjun Xie; Dong Lu
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Paper Abstract

Valence-band offsets at lattice mismatched semiconductor heterojunctions are studied by using the interface-bond-polarity model with tight-binding approximation. The interface dipoles for lattice mismatched (001) III-V/IV heterojunctions are calculated based on the polarity of individual bond. It is found that the valence-band discontinuities depend strongly upon both of the strain conditions and the interface bond structures. An improved agreement of the calculated valence-band offsets with that of experimental measurement can be obtained by taking account of the strain effect and the interface dipole correction simultaneously.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190768
Show Author Affiliations
Jianjun Xie, Fudan Univ. (China)
Dong Lu, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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