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Proceedings Paper

High-resolution x-ray study of Ti/Fe interface with oxygen contamination
Author(s): Tianqu Gu; Mark Sutton; Zhihua Yan; Robert Schulz
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Paper Abstract

Ti/Fe bilayers are deposited on SiO2 substrate in ultra-high- vacuum environment (10-9 Torr) in different sequence: SiO2/Fe(200 angstrom)/Ti(300 angstrom) and SiO2/Ti(300 angstrom)/Fe(200 angstrom). The interfaces of the films and their evolution at various annealing stages are studied by X-ray reflectivity measurements using high resolution triple-crystal X-ray diffractometer. The study shows that a different sequence of deposition results in different microstructure and affects subsequent evolution of the interfaces. It is also noticed that the annealed films are contaminated by the oxygen. Electron density profiles for the structures are obtained by nonlinear least square fits to the reflectivity curves.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190766
Show Author Affiliations
Tianqu Gu, McGill Univ. (Canada)
Mark Sutton, McGill Univ. (Canada)
Zhihua Yan, McGill Univ. and Research Institute of Hydro-Quebec (Canada)
Robert Schulz, Research Institute of Hydro-Quebec and McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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