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Proceedings Paper

Well-width dependence of Stark effect in ZnSe-ZnCdSe multiple quantum well modulators
Author(s): Jiu Yao Tang; Tomohisa Onishi; H. Kurusu; Yoichi Kawakami; Shizuo Fujita; Shigeo Fujita
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Paper Abstract

We report the effect of the well width on room temperature operation of II-VI p-i-n quantum Stark effect modulators using ZnSe-ZnCdSe multiple quantum well structures within ZnSe p-n junctions. Results are given for the theoretical calculation of exciton binding energy and Stark shift, absorption and differential absorption as a function of the applied electric field. An optimum well width is estimated in current structures for the achievement of the largest (Delta) T/T by means of both theoretical and experimental approaches.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190765
Show Author Affiliations
Jiu Yao Tang, Kyoto Univ. (Japan)
Tomohisa Onishi, Kyoto Univ. (Japan)
H. Kurusu, Kyoto Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)
Shizuo Fujita, Kyoto Univ. (Japan)
Shigeo Fujita, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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