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Proceedings Paper

Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy
Author(s): X. Y. Gong; Tomuo Yamaguchi; Hirofumi Kan; Toshihiko Makino; T. Nakatsukasa; Y. Kaneko; Makoto Aoyama; Nelson L. Rowell; A. G. Wang; R. Rinfret
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Paper Abstract

(Ga1-x)InxAs1-ySby/InAs multilayers with cut off wavelength longer than 6 micrometers have been grown by Gd-doped step cooling liquid phase epitaxy (LPE) between 530 and 460 degree(s)C. The optical properties of epilayers were characterized by FTIR transmission measurement, photoluminescence (PL), Raman spectroscopy and spectro- ellipsometry. The results showed that InAsSb epilayers have high purity, and good homogenity. Photodetectors were fabricated using this material. A room temperature dark current near 1 mA at -0.5 V has been obtained.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190759
Show Author Affiliations
X. Y. Gong, Hamamatsu Photonics k.k. (Japan)
Tomuo Yamaguchi, Shizuoka Univ. (Japan)
Hirofumi Kan, Hamamatsu Photonics k.k. (Japan)
Toshihiko Makino, Hamamatsu Photonics k.k. (Japan)
T. Nakatsukasa, Shizuoka Univ. (Japan)
Y. Kaneko, Shizuoka Univ. (Japan)
Makoto Aoyama, Shizuoka Univ. (Japan)
Nelson L. Rowell, National Research Council Canada (Canada)
A. G. Wang, National Research Council Canada (Canada)
R. Rinfret, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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