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Proceedings Paper

Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon
Author(s): T. K. Kwok
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Paper Abstract

When the dicarbon point defect with photoluminescence line at 969 meV (7818 cm-1) is thermally destroyed, previously unreported photoluminescence lines at 902.73 (7281), 919.72 (7418), 924.06 (7453), 935.09 (7542) and 949.85 meV (7661 cm-1) are observed. It is shown that the point defects providing these photoluminescence lines consist of carbon and oxygen atoms. Previously reported photoluminescence sublines of the dicarbon center located at 951.16 (7671), 952.98 (7686), 953.96 (7694) and 956.91 meV (7718 cm-1) are not observed in Czochralski silicon with high oxygen concentration. It is shown that vacancies are not the species to modify the dicarbon center forming these satellite sublines and interstitial silicon atoms are the remaining possibility.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190745
Show Author Affiliations
T. K. Kwok, Fudan Univ. (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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