Share Email Print

Proceedings Paper

Study of the selectivity of porous silicon formation
Author(s): Xinjun Wan; Yun Zhen Wang; Zongsheng Lai
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The process of the porous silicon layer formation and etching off is a new generation surface micromachining technology. The key problem of using porous silicon as a sacrificial layer is to do research on the selectivity of porous layer formation. In this paper, we will present the experimental results about which that the silicon is transformed to porous silicon in concentrated HF solution, including the relationship with current density J (mA/cm2), HF concentration C (wt%) and the substrate resistivity ((Omega) cm). Besides, by using implantation and epitaxial methods to change the doping level of the mask, porous silicon can be locally formed, the thickness and the undercutting may be changed by the parameters described before.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190743
Show Author Affiliations
Xinjun Wan, East China Normal Univ. (China)
Yun Zhen Wang, East China Normal Univ. (China)
Zongsheng Lai, East China Normal Univ. (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

© SPIE. Terms of Use
Back to Top