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Proceedings Paper

Modification of oxygen-doped polysilicon using ion implantation
Author(s): Yun Zhen Wang; Jian Hu; Zongsheng Lai; Dezhang Zhu; Jianqin Cao; Jinlong Xu
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Paper Abstract

The present paper reports on the sheet resistance of Semi-Insulating Oxygen-Doped Polysilicon (SIPOS) using ion implantation. The type of dopant implanted, implant dose and annealing temperature are influence the sheet resistance of implanted SIPOS film. In addition, the behaviors of oxygen and hydrogen in implanted SIPOS film have been described, so that may be form the conduction model. We used three samples with different oxygen content implanted by Boron (B), Phosphorus (P) and Arsenic (As) various ions and measured the sheet resistance of those samples. As it is well known, the electrical properties and microstructures of SIPOS films are very sensitive to the oxygen content, so we measure the changes of oxygen content and hydrogen content after implantation, and then the conduction of implanted SIPOS film have been analyzed in this paper.

Paper Details

Date Published: 26 October 1994
PDF: 4 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190742
Show Author Affiliations
Yun Zhen Wang, East China Normal Univ. (China)
Jian Hu, East China Normal Univ. (China)
Zongsheng Lai, East China Normal Univ. (China)
Dezhang Zhu, Lab. of Nuclear Analysis Techniques Academy (China)
Jianqin Cao, Lab. of Nuclear Analysis Techniques Academy (China)
Jinlong Xu, Lab. of Nuclear Analysis Techniques Academy (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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