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Proceedings Paper

Structure and characteristic of porous silicon layer
Author(s): Guang-Pu Wei; Jingwei Feng; Yiming Zheng; Yu Li
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Paper Abstract

Porous silicon was prepared by the anodization of p/p+ epitaxial c-Si wafer. Its structure was examined by electron microscopy, Raman spectrum and infrared spectrum. The results of examination show the porous Si consists of many nano-scale pores and crystalline slices, and at the surface of slices, there is a amorphous-like thin film containing Si-H, Si-O and Si-H2 bonds. When the porous Si layer was excited with violetilight, bright visible photoluminescence can be observed. The origin of visible luminescence may be due to both the quantum confinement of carriers into the nano- scale slices (or pillars) and the fluorescence emission of the amorphous-like film containing Si-H, Si-O and Si-H2 bonds.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190741
Show Author Affiliations
Guang-Pu Wei, Shanghai Univ. of Science and Technology (China)
Jingwei Feng, Shanghai Univ. of Science and Technology (China)
Yiming Zheng, Shanghai Univ. of Science and Technology (China)
Yu Li, Shanghai Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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