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Proceedings Paper

Anomalous damage behavior of BF2+ implantation in silicon
Author(s): Chenglu Lin; Zu Yao Zhou; Xiao Qin Li; Shichang Zou; Peter L. F. Hemment
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Paper Abstract

The anomalous damage behavior of BF2+ implantation into silicon at 300 K and 77 K has been investigated by using grazing angle Rutherford backscattering and channeling in combined with transmission electron microscopy. The damage or the amorphous layer produced by BF2+ implantation is different from other heavier ions (> 27Al+). For BF2+ implantation at 300 K, there are two damage peaks, one at a depth near the projectile range of the ions, the other at the near surface. While for BF2+ implantation at 77 K, the damage or the amorphous layer first occurs at the surface, then the amorphous layer is extended to the bulk of silicon with increasing does.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190740
Show Author Affiliations
Chenglu Lin, Shanghai Institute of Metallurgy (China)
Zu Yao Zhou, Shanghai Institute of Metallurgy (China)
Xiao Qin Li, Shanghai Institute of Metallurgy (China)
Shichang Zou, Shanghai Institute of Metallurgy (China)
Peter L. F. Hemment, Univ. of Surrey (United Kingdom)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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