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Proceedings Paper

Preparation of SiO2 film by direct photo-CVD on strained SiGe layer
Author(s): C. T. Lin; Yan-Kuin Su; Shoou-Jinn Chang; D. K. Nayak; Y. Shiraki
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Paper Abstract

High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 X 10-9 A/cm2 under a 2 X 106 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190739
Show Author Affiliations
C. T. Lin, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Shoou-Jinn Chang, National Cheng Kung Univ. (Taiwan)
D. K. Nayak, Univ. of Tokyo (Japan)
Y. Shiraki, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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