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Proceedings Paper

Dual-beam photocurrent spectroscopy in undoped a-SI:H: a method for study of excited deep gap states in thin film semiconductors
Author(s): J. Z. Liu; G. Lewen; Pere Roca i Cabarrocas
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Paper Abstract

We have applied the dual-beam photocurrent spectroscopy to study the excited defect states in a-Si:H. The pump beam is used to create the excited state while the second beam is used as a probe. It is shown that the anomalous band in dual-beam photocurrent spectra of a-Si:H results from a combination of two processes: photocurrent enhancement due to excitations by the probe light for the D0 states to the conduction band. Using the dual-beam photocurrent spectra, we measured the optical transition energy (0.77 eV) and the electron correlation energy (0.16 eV) for the filled D- defects (i.e., excited D0 defects). The dual-beam photocurrent spectroscopy may also be used for study of deep gap states in other thin film semiconductors.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190738
Show Author Affiliations
J. Z. Liu, NEC Research Institute (United States)
G. Lewen, NEC Research Institute (United States)
Pere Roca i Cabarrocas, Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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