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Proceedings Paper

Luminescent Si quantum dots films: preparation and characterization
Author(s): Kun-Ji Chen; Xinfan Huang; Maorui Chen; Weihua Shi; Zhifeng Li; Duan Feng
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Paper Abstract

We report two kinds of method for preparing luminescent silicon films with quantum crystallites (QCs) structures: (1) Using laser annealing technique to crystallize ultrathin amorphous silicon layers which were constructed in a-Si:H/a-SiNx:H multiquantum well (MQW) structures. (2) Applying the layer-by-layer deposition technique to the growth of silicon QCs by varying the hydrogen plasma exposure time. The novel structures of these two types of QCs films were characterized by X-ray diffraction and Raman scattering spectroscopy. The room temperature visible photoluminescence (PL) from Si QCs with size of 4 nm or less has been observed in most of samples.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190736
Show Author Affiliations
Kun-Ji Chen, Nanjing Univ. and National Lab. for Superlattices and Microstructures (China)
Xinfan Huang, Nanjing Univ. and National Lab. for Superlattices and Microstructures (China)
Maorui Chen, Nanjing Univ. (China)
Weihua Shi, Nanjing Univ. (China)
Zhifeng Li, Nanjing Univ. and National Lab. for Superlattices and Microstructures (China)
Duan Feng, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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