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Proceedings Paper

Formation characteristics and stability of nanometric TiN film in multilayers
Author(s): Lingyun Zhou; Liwen Wu; Wenhan Liu; Zhenjia Xu; Yuheng Zhang
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Paper Abstract

Formation characteristics and stability of TiN film as coating layer on (alpha) -Si film or as interlayer between W films or W and Si films have been studied by TEM, SAD and XRD. Experimental results show that sputtered nanometric TiN films are homogeneous polycrystalline with high stability: diffusion between TiN and W or TiN and Si can be neglected until 850 degree(s)C and there is no reaction of TiN with W or TiN with Si in these multilayers even if they are annealed up to 900 degree(s)C.

Paper Details

Date Published: 26 October 1994
PDF: 4 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190726
Show Author Affiliations
Lingyun Zhou, Univ. of Science and Technology of China (China)
Liwen Wu, Univ. of Science and Technology of China (China)
Wenhan Liu, Univ. of Science and Technology of China (China)
Zhenjia Xu, Univ. of Science and Technology of China (China)
Yuheng Zhang, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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