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Proceedings Paper

Influence of pretreatments and deposition parameters on diamond nucleation density in diamond film deposition by hot filament CVD
Author(s): Zhuo Sun; Zhihao Zheng; Ning Xu
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Paper Abstract

In synthsis of diamond thin film by Hot Filment Chemical Vapor Deposition (HF-CVD), many factors can affect diamond nucleation. The mechanical pretreatments, scratching with diamond paste or ultrasonic irradiation with diamond powder suspensions, and the chemical pretreatment, such as erosion with a solution of HF-HNO3, can create many defects on the surface of silicon substrate and promote the diamond nucleation density. Also, diamond nucleation density can be promoted with carbide intermediate layer of diamond-like carbon film on polished silicon substrate. Diamond nucleation can be varied with different deposition parameters, among the deposition parameters, CH4/H2 ratio and substrate temperatures influence the diamond nucleation effectively.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190719
Show Author Affiliations
Zhuo Sun, East China Normal Univ. (China)
Zhihao Zheng, East China Normal Univ. (China)
Ning Xu, East China Normal Univ. (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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