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Proceedings Paper

Chemical vapor deposition of polycrystalline diamond films onto the Si substrates coated by Si3N4 intermediate layers
Author(s): Ning Xu; Zhihao Zheng; Zhuo Sun
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Paper Abstract

Polycrystalline diamond films have been deposited onto Si3N4-coated silicon substrates using thermal chemical vapor deposition (CVD). The defects on the amorphous layer played an essential role in diamond nucleation. After the deposition, very few diamond crystallites were found on the untreated Si3N4 coating, while a diamond film had been formed on the ultrasonically treated Si3N4 coating with diamond powder. The adhesion of diamond film to Si3N4-coated Si substrates was stronger than that of diamond film to Si substrate and decreased as the CH4 concentration increased. The erosion resistance of diamond film on Si3N4-coated Si substrate was much stronger than that of Si3N4 film on Si substrate.

Paper Details

Date Published: 26 October 1994
PDF: 1 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190716
Show Author Affiliations
Ning Xu, East China Normal Univ. (China)
Zhihao Zheng, East China Normal Univ. (China)
Zhuo Sun, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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