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Proceedings Paper

Photo-assisted phase transition in antiferroelectric thin films for optical switching and storage
Author(s): Feiling Wang; Gene H. Haertling; Kewen K. Li
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Paper Abstract

It is known that significant change of birefringence accompanies field- induced antiferroelectric-to ferroelectric phase transition in antiferroelectric thin films. When an antiferroelectric lead zirconate titanate (PZT) thin film material was bounded by a semiconducting indium-tin oxide (ITO) layer, however, the phase transition was suppressed by an effect of the PZT-ITO interface. Radiation of near- ultraviolet light has shown to be effective in eliminating the interfacial suppression to the phase transition. This phenomenon has furnished a UV-activated birefringence in the PZT thin films for optical switching and storage.

Paper Details

Date Published: 12 October 1994
PDF: 7 pages
Proc. SPIE 2338, 1994 Topical Meeting on Optical Data Storage, (12 October 1994); doi: 10.1117/12.190180
Show Author Affiliations
Feiling Wang, Clemson Univ. (United States)
Gene H. Haertling, Clemson Univ. (United States)
Kewen K. Li, Clemson Univ. (United States)


Published in SPIE Proceedings Vol. 2338:
1994 Topical Meeting on Optical Data Storage

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