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Proceedings Paper

Sn-Sb-Se phase-change media for high-density write-once optical disk
Author(s): Tetsuya Nishida; Hisataka Sugiyama; Shinkichi Horigome
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Paper Abstract

We have developed Sn-Sb-Se/Sb-Bi bi-layer phase-change media for high- density write-once optical disks. Crystallized marks as small as 0.5 micrometers are stably recorded without initialization. These phase-change media, compared to ablative type write-once media, have high carrier-to- noise ratio, low jitter, and long life. Mark-edge recording with multi- pulse laser irradiation on the media provides a linear bit density of 0.48 micrometers /bit and track pitch of 1.2 micrometers using a 690-nm-wavelength laser diode and 0.55 NA objective lens. This corresponds to 1.1 Gbit/in.2, or 14 GB formatted data capacity per both sides for a 12- inch-diameter disk with a zoned CAV format.

Paper Details

Date Published: 12 October 1994
PDF: 7 pages
Proc. SPIE 2338, 1994 Topical Meeting on Optical Data Storage, (12 October 1994); doi: 10.1117/12.190172
Show Author Affiliations
Tetsuya Nishida, Hitachi Ltd. (Japan)
Hisataka Sugiyama, Hitachi Ltd. (Japan)
Shinkichi Horigome, Hitachi Ltd. (Japan)

Published in SPIE Proceedings Vol. 2338:
1994 Topical Meeting on Optical Data Storage
David K. Campbell; Martin Chen; Koichi Ogawa, Editor(s)

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