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Proceedings Paper

Optical absorption coefficient of CdZnTe
Author(s): A. J. Syllaios; Pok-Kai K. Liao; Brian E. Dean
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Paper Abstract

The optical absorption coefficient of CdZnTe in the near and mid infrared spectral regions was measured at room temperature using FTIR transmission spectroscopy for several x-values in Cd1-xZnyTe grown by the horizontal Bridgman technique as well as for CdTe and ZnTe. The compositional dependence of the absorption coefficient near the band edge was used to determine the composition of bulk CdZnTe, an important material parameter in its application as a substrate for HgCdTe epitaxial growth. In the mid IR range, we find that the wavelength dependence of the absorption coefficient could be varied by adjusting the stoichiometry of the material, i.e., by annealing under various Cd overpressures. The shape of the mid IR Fourier transform infrared spectra is related to the type and the concentration of the free carriers as well as the resistivity of the material. For n-type material, the wavelength dependence of the absorption coefficient can be described by free carrier absorption.

Paper Details

Date Published: 7 October 1994
PDF: 6 pages
Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189248
Show Author Affiliations
A. J. Syllaios, Texas Instruments Inc. (United States)
Pok-Kai K. Liao, Texas Instruments Inc. (United States)
Brian E. Dean, II-VI Inc. (United States)

Published in SPIE Proceedings Vol. 2274:
Infrared Detectors: State of the Art II
Randolph E. Longshore, Editor(s)

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