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Proceedings Paper

Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector
Author(s): True Lon Lin; Jin Suk Park; Sarath D. Gunapala; Eric W. Jones; Hector M. Del Castillo
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Paper Abstract

Long wavelength Si1-xGex/Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si1-xGex layers on Si. Recently, Si0.7Ge0.3/Si HIP detectors with either a Si1-xGex single layer or a Si1-xGex/Si multi-layer have been demonstrated with cutoff wavelengths out to 23 micrometers . Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si1-xGex/Si HIP infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C1, for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.

Paper Details

Date Published: 7 October 1994
PDF: 7 pages
Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189245
Show Author Affiliations
True Lon Lin, Jet Propulsion Lab. (United States)
Jin Suk Park, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)
Eric W. Jones, Jet Propulsion Lab. (United States)
Hector M. Del Castillo, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 2274:
Infrared Detectors: State of the Art II
Randolph E. Longshore, Editor(s)

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