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Proceedings Paper

Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability
Author(s): Hongyi Su; Weiguo Sun
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Paper Abstract

A metal-insulator-semiconductor device, Auger spectroscopy and infrared absorption spectrum have been used to study the impurities in phosphorosilicate glass (sio2/SPG/sio2)/InSb. The hydroxyl ions which caused current leakage during high vacuum outgassing were investigated. The current leakage mechanism in InSb p/n diodes have been discussed. The reasons for hydroxyl ions remaining in the passivation films were mentioned.

Paper Details

Date Published: 7 October 1994
PDF: 6 pages
Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189244
Show Author Affiliations
Hongyi Su, Luoyang Optoelectronics Institute (China)
Weiguo Sun, Luoyang Optoelectronics Institute (China)


Published in SPIE Proceedings Vol. 2274:
Infrared Detectors: State of the Art II
Randolph E. Longshore, Editor(s)

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