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Proceedings Paper

Properties of the oxidation on Hg1-xCdxTe by ellipsometry
Author(s): Xierong Hu; Runqing Jiang; Fei-Fei Wu; Shuzhi Zhang; Xiangyang Li; Jiaxiong Fang; Guosen Xu; Jie Shen; Xiaoning Hu
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Paper Abstract

The rates of growth on oxide films on polished Hg1-xCdxTe surfaces exposed to room air are obtained by measuring the ellipticity of polarized light reflected from the surfaces with the ellipsometer. Plots of thickness vs. the logarithm of the time in room air are linear after about 1500 minutes with slopes of 15 angstroms/decade. Immediately after polishing the native oxide film is proximately 10 angstroms thick and increase in thickness by about 36 angstroms after one week. Measurements utilizing polarized light are made of the increase in film thickness with time on Hg1-xCdxTe surfaces immersed in water. The regular of the anodization voltage versus time was given. With ellipsometer, the thickness of anodic oxides film grown on Hg1-xCdxTe is determined. Further details and discussion will be presented.

Paper Details

Date Published: 7 October 1994
PDF: 5 pages
Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189232
Show Author Affiliations
Xierong Hu, Shandong Univ. (China)
Runqing Jiang, Shandong Univ. (China)
Fei-Fei Wu, Shandong Univ. (China)
Shuzhi Zhang, Shandong Univ. (China)
Xiangyang Li, Shandong Univ. (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)
Guosen Xu, Shanghai Institute of Technical Physics (China)
Jie Shen, Shanghai Institute of Technical Physics (China)
Xiaoning Hu, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 2274:
Infrared Detectors: State of the Art II
Randolph E. Longshore, Editor(s)

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