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Proceedings Paper

Stable second-order nonlinearity in SiO2-based waveguides on Si using temperature/electric-field poling
Author(s): Richard A. Myers; Steven R. J. Brueck; Richard P. Tumminelli
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Paper Abstract

A stable second-order nonlinearity established by temperature/electric-field poling of a SiO2-based waveguide stack on a Si substrate with a nonlinearity comparable to that observed in bulk fused silica samples (approximately 1 pm/V) is described. Samples with various layer thickness and composition are compared to determine important parameters in generating the second-order nonlinearity. Temperature and voltage studies are also presented to help understand the dynamics of the nonlinearity.

Paper Details

Date Published: 3 October 1994
PDF: 9 pages
Proc. SPIE 2289, Doped Fiber Devices and Systems, (3 October 1994); doi: 10.1117/12.188708
Show Author Affiliations
Richard A. Myers, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)
Richard P. Tumminelli, Charles Stark Draper Lab., Inc. (United States)


Published in SPIE Proceedings Vol. 2289:
Doped Fiber Devices and Systems
Michel J. F. Digonnet, Editor(s)

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