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Proceedings Paper

Application of room-temperature CMOS process for low-temperature infrared readout circuit design
Author(s): Wei-Lee Lu; Chin-Hsin Kao; L. S. Lu; Far-Wen Jih; Tai Ping Sun; Sheng-Jehn Yang; Charles Ching-Hsia Hsu; Chung-Yu Wu
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Paper Abstract

Silicon VLSI technology can be used to build a high density readout circuit for the emerging high resolution IRFPA imaging system. The readout circuit has to be operating at liquid nitrogen (LN) temperature in order to both improve system performance and design simplicity as well as reduce complexity. Devices with various sizes are measured down to LN temperature. As silicon MOSFETs cooled down, various anomalies are observed. The observed anomalies in the measured results are described and explained whenever possible. The two most important temperature dependent parameters -- threshold voltage and carrier mobility are studied. Simple guidelines are provided to obtain suitable SPICE MOS level 3 dc parameters for circuit simulation.

Paper Details

Date Published: 17 October 1994
PDF: 12 pages
Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); doi: 10.1117/12.188668
Show Author Affiliations
Wei-Lee Lu, Chung Cheng Institute of Technology (Taiwan)
Chin-Hsin Kao, Chung Cheng Institute of Technology (Taiwan)
L. S. Lu, Chung Cheng Institute of Technology (Taiwan)
Far-Wen Jih, Chung Shan Institute of Science and Technology (Taiwan)
Tai Ping Sun, Chung Shan Institute of Science and Technology (Taiwan)
Sheng-Jehn Yang, Chung Shan Institute of Science and Technology (Taiwan)
Charles Ching-Hsia Hsu, National Tsing Hua Univ. (Taiwan)
Chung-Yu Wu, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 2269:
Infrared Technology XX
Bjorn F. Andresen, Editor(s)

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