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Proceedings Paper

Epitaxial growth of HgCdTe on sapphire for photovoltaic detectors
Author(s): Kazuo Ozaki; Koji Fujiwara; Hiroji Ebe; Yoshihiro Miyamoto
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Paper Abstract

We developed a technique for growing Hg0.7Cd0.3Te on CdTe/sapphire. Using metal organic chemical vapor deposition (MOCVD), we grew CdTe on sapphire substrates. We use a combination of isothermal vapor phase epitaxy (ISOVPE) followed by liquid phase epitaxy (LPE) to grow Hg0.7Cd0.3Te on them. The ISOVPE converts the surface of the CdTe layer to Hg0.7Cd0.3Te, which decreases the lattice mismatch between CdTe and HgCdTe and decreases the surface defects on HgCdTe that originate from lattice mismatching. After growth, we annealed the wafer in a Hg atmosphere to control the carrier concentration. We used the performance of photovoltaic detectors to examine the wafer quality. A typical diode with a 5-micrometers cutoff wavelength had a responsivity (Re) value or 2.87 A/W. The diffusion current limits R0A down to 120 K, and the generation- recombination (g-r) current limits R0A at 77 K.

Paper Details

Date Published: 17 October 1994
PDF: 9 pages
Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); doi: 10.1117/12.188655
Show Author Affiliations
Kazuo Ozaki, Fujitsu Labs. Ltd. (Japan)
Koji Fujiwara, Fujitsu Labs. Ltd. (Japan)
Hiroji Ebe, Fujitsu Labs. Ltd. (Japan)
Yoshihiro Miyamoto, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 2269:
Infrared Technology XX
Bjorn F. Andresen, Editor(s)

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