Proceedings PaperRecent results on quantum-well intersubband infrared detectors
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Some recent results on GaAs quantum well intersubband IR detectors for the long wavelength infrared are presented. These include studies of a systematic series of samples grown by molecular beam epitaxy (MBE) at three different facilities, and of multicolor detectors. In the first part, we compare performance of different detectors to address practical issues related to producibility using this new approach to infrared detection. We show that detectors made with specifications provided to several MBE facilities yield good results, which implies that these detectors are compatible with standard GaAs technology. We also show that the state-of-the- art GaAs-MBE layers are extremely uniform making this technology suitable for large focal plane arrays. In the second part, we apply the flexibility provided by the MBE growth technique in fabricating a voltage selectable multicolor detector.