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Proceedings Paper

High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays
Author(s): Bernard Groussin; Francois Pitard; Gerard Volluet; Claude Carriere
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Paper Abstract

This paper describes recent progress in the development of more advance laser diode pump source: 'Monolithic Surface Emitting Laser Diode' (MOSEL). In this structure, the linear bar arrays are epitaxially grown on an engraved substrate between etched deflection mirrors adjacent to the laser facets. The laser diode structure grown by MOCVD technique is a single quantum well graded index active region (SQW/GRINSCH). A specific process has been designed to have cleaved laser diode facets. Monolithic elements of 0.1 cm2 have been designed and mounted. The quasi-CW operation gives over 100 W of optical power or a QCW power density of 1 KW/cm2. A compact assembly of 10 similar elements gives an optical power of 1 KW QCW. CW operation have been also tested up to 150 W CW/cm2.

Paper Details

Date Published: 30 September 1994
PDF: 9 pages
Proc. SPIE 2210, Space Optics 1994: Space Instrumentation and Spacecraft Optics, (30 September 1994); doi: 10.1117/12.188131
Show Author Affiliations
Bernard Groussin, Thomson-CSF (France)
Francois Pitard, Thomson-CSF (France)
Gerard Volluet, Thomson-CSF (France)
Claude Carriere, Thomson-CSF (France)


Published in SPIE Proceedings Vol. 2210:
Space Optics 1994: Space Instrumentation and Spacecraft Optics

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