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Proceedings Paper

Monolithic InGaAs-on-silicon detector with a CMOS-switched capacitor integrator
Author(s): Abhay M. Joshi; Frank J. Effenberger; Michael Grieco; Guotong Feng; Wei Zhong; J. Ott
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Paper Abstract

We have successfully grown InGaAs detectors on the silicon substrate using the special technique of selective epitaxy. Small diameter (50 micrometers ) selective area depositions of In0.5Ga0.5As on silicon have exhibited a lower dislocation density, and hence, better electrical performance. These InGaAs detectors are grown by Molecular Beam Epitaxy (MBE). The final goal is to monolithically integrate InGaAs detectors with a silicon CMOS switched capacitor integrator. We have designed a CMOS switched-capacitor integrator (SCI) to realize a linear current-to-voltage conversion over a wide voltage range (-5 to +5 V) with low noise characteristics. The SCI circuit consists of an operational amplifier with a feedback capacitor and a reset switch. The SCI circuit uses +/- 5 V dual power supply and one -5 to +5 V voltage pulse generator. The circuit was simulated using PSPICE and the chip layout was done with the Mentor Graphics.

Paper Details

Date Published: 28 September 1994
PDF: 8 pages
Proc. SPIE 2290, Fiber Optic Materials and Components, (28 September 1994); doi: 10.1117/12.187447
Show Author Affiliations
Abhay M. Joshi, Discovery Semiconductors, Inc. (United States)
Frank J. Effenberger, Univ. of Central Florida (United States)
Michael Grieco, New Jersey Institute of Technology (United States)
Guotong Feng, New Jersey Institute of Technology (United States)
Wei Zhong, New Jersey Institute of Technology (United States)
J. Ott, Stevens Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2290:
Fiber Optic Materials and Components
Hakan H. Yuce; Dilip K. Paul; Roger A. Greenwell, Editor(s)

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