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Proceedings Paper

Mass production of AlGaAs laser diodes using MBE
Author(s): Hiroshi Mataki; Tahei Yamaji; Haruo Tanaka
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Paper Abstract

This paper first shows the basic idea about the mass production technology of AlGaAs laser diodes using Molecular Beam Epitaxy (MBE) technique. 'GaAs passivation technique' is the key to realize the stable mass production of self-aligned structure laser diodes. This paper, then, describes the designing concept and performance of a novel laser diode for short-haul optical data communications which we have recently developed. It has a high relaxation oscillation frequency, around 3 GHz, which is favorable to transmit data at a rate of 600 to 1200 Mbps. The lifetime (MTTF) is above 100,000 hours under 3 mW cw operation at 60 degree(s)C.

Paper Details

Date Published: 28 September 1994
PDF: 10 pages
Proc. SPIE 2290, Fiber Optic Materials and Components, (28 September 1994); doi: 10.1117/12.187432
Show Author Affiliations
Hiroshi Mataki, Rohm Co., Ltd. (Japan)
Tahei Yamaji, Rohm Co., Ltd. (Japan)
Haruo Tanaka, Rohm Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2290:
Fiber Optic Materials and Components
Hakan H. Yuce; Dilip K. Paul; Roger A. Greenwell, Editor(s)

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