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Proceedings Paper

Residual stress measurements on polycrystalline diamond
Author(s): Alan B. Harker; D. G. Howitt; Siduo Chen; John F. Flintoff; M. R. James
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Paper Abstract

The magnitude of the residual stresses in thick samples of polycrystalline diamond were measured by the sine squared, angular resolved x-ray diffraction (XRD) technique and by detailed analysis of electron channeling patterns from individual grains in polished diamond films using a scanning electron microscope. The XRD measurements were made on samples produced by both plasma torch and microwave plasma low pressure growth techniques with a range of microstructures. Results show that residual levels of stress +/- 0.3 GPa can be generated inside the thinner films on substrates by thermal expansion mismatches, while average residual stress in free standing 0.5 to 2 mm thick diamond plates is negligible. Within the individual grains of the thicker films, localized stress variations on the order of +/- 0.5 to 0.8 GPa can be distinguished.

Paper Details

Date Published: 28 September 1994
PDF: 8 pages
Proc. SPIE 2286, Window and Dome Technologies and Materials IV, (28 September 1994); doi: 10.1117/12.187347
Show Author Affiliations
Alan B. Harker, Rockwell International Science Ctr. (United States)
D. G. Howitt, Univ. of California/Davis (United States)
Siduo Chen, Univ. of California/Davis (China)
John F. Flintoff, Rockwell International Science Ctr. (United States)
M. R. James, Rockwell International Science Ctr. (United States)

Published in SPIE Proceedings Vol. 2286:
Window and Dome Technologies and Materials IV
Paul Klocek, Editor(s)

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