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Proceedings Paper

Photoionization investigation of defect traps in mercuric iodide room-temperature x-ray spectrometers
Author(s): John M. Van Scyoc III; T. S. Gilbert; Tuviah E. Schlesinger; Ralph B. James
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Paper Abstract

Impurities in mercuric iodide (HgI2) x-ray spectrometers are investigated by photoionization (PI) spectroscopy. The observed spectrum is shown to be a function of the particular impurities present in the material both in as-grown material and in material intentionally doped with Cu and Ag. The effect of contaminants on detector performance is also explicitly demonstrated as is the need for high purity starting materials and carefully controlled processing conditions.

Paper Details

Date Published: 21 September 1994
PDF: 9 pages
Proc. SPIE 2305, Gamma-Ray Detector Physics and Applications, (21 September 1994); doi: 10.1117/12.187269
Show Author Affiliations
John M. Van Scyoc III, Carnegie Mellon Univ. (United States)
T. S. Gilbert, Carnegie Mellon Univ. (United States)
Tuviah E. Schlesinger, Carnegie Mellon Univ. (United States)
Ralph B. James, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 2305:
Gamma-Ray Detector Physics and Applications
Elena Aprile, Editor(s)

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