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Proceedings Paper

New phenomenon in ion/laser beam semiconductor microstructure fabrication: impact on reliability
Author(s): Sergei Yurievich Sokolov
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Paper Abstract

New giant-far-action lateral phenomenon (GFALP) in ion/laser beam semiconductor microstructure fabrication is observed to be the initial cause of defects mobility activation in microelectronic devices, device microstructures mutual influence and contamination of working areas of elements by defects of processing origin within a whole device crystal. The giant-far-action lateral phenomenon consists in point defects generation at local crystal surface modification by any means (for example: ion/laser beam or diamond incisor) and deep sideways penetration of defects (vacancies and interstitials) out into the initially clean material under the pressure of mechanical strains that occur at the boundary of the modified region. In case of high implantation dose (1016 ions/cm2), laser solid state diffuse doping, laser beam annealing of implanted semiconductor surface, or laser beam /mechanical scribing of wafer surface the scale of GFALP lateral effect exceeds 1 mm. Besides, at heavy implantation dose, point defects concentration exceeding 1018 defects/cm3, a phase transition of vacancy to dislocations in the gaseous phase of point defects was observed to occur with consequent dislocation sliding at a distance of more than 150 micron aside the boundary of the implanted zone.

Paper Details

Date Published: 14 September 1994
PDF: 11 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186933
Show Author Affiliations
Sergei Yurievich Sokolov, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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