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Proceedings Paper

Low-temperature scanning electron microscopy of niobium superconducting tunnel junctions with trapping blocks
Author(s): P. H. Videler; Nicola Rando; Peter Verhoeve; Anthony J. Peacock; S. Lemke; J. Martin; R. Gross; R. Huebener; John M. Lumley
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Paper Abstract

In this paper we investigate the QP transport and loss mechanisms in a superconducting tunnel junction using the Low Temperature Scanning Electron Microscopy (LTSEM) technique. This approach allows precise control of the energy and position of a deposited electron pulse, which, within certain conditions, simulates the X-ray photo-absorption process. An Nb-Al-AlOxNb junction designed as a test structure which included Al blocks in the leads to act as quasiparticle traps, has been investigated. Asymmetries in the LTSEM signal distribution can be qualitatively described from the device geometry. From both the spatial distribution can be qualitatively described from the device geometry. From both the spatial distribution and the time resolved measurements the diffusion length in the amorphous Nb was determined to be of the order of 8 micrometers . The LTSEM technique has demonstrated that quasiparticles produced in the leads cannot enter the tunnel barrier due to the presence of the Al traps.

Paper Details

Date Published: 16 September 1994
PDF: 10 pages
Proc. SPIE 2280, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy V, (16 September 1994); doi: 10.1117/12.186833
Show Author Affiliations
P. H. Videler, European Space Agency/ESTEC (Netherlands)
Nicola Rando, European Space Agency/ESTEC (Netherlands)
Peter Verhoeve, European Space Agency/ESTEC (Netherlands)
Anthony J. Peacock, European Space Agency/ESTEC (Netherlands)
S. Lemke, Univ. Tubingen (Germany)
J. Martin, Univ. Tubingen (Germany)
R. Gross, Univ. Tubingen (Germany)
R. Huebener, Univ. Tubingen (Germany)
John M. Lumley, Oxford Instruments (United Kingdom)


Published in SPIE Proceedings Vol. 2280:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy V
Oswald H. W. Siegmund; John V. Vallerga, Editor(s)

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